high voltage silicon diode s for micro-wave oven 2CL3509 2cl3512 rev. a1 tianjin zhonghuan semiconductor co., lt d p1/3 high voltage silicon diodes for micro-wave oven primary characteristics type 2CL3509 2cl3512 i f(av) 350ma v rrm 9kv 12kv i fsm 30a i rm 5ua v fm 9v 10v t j max. 130c features z i f av 350ma z v rrm 9kv 12kv z high reliability applications rectification for high voltage power supply of magnetron in micro wave oven and others mechanical data z case: molded plastic body z epoxy meets ul 94v-0 flammability rating z terminals: pure tin plated leads, solderable per j-std-002 and jesd22-b102, e3 suffix for consumer grade, meet jesd201 class 1a whisker test. z polarity: color band denotes cathode end maximum rating (ta=25 o c unless otherwise noted) parameter symbol 2CL3509 2cl3512 unit repetitive peak reverse voltage v rrm 9 12 kv average forward current 60h z half-sine wave, resistance load, ta 60c i f(av) 350 ma forward surge current 60h z half-sine wave, 1cycle,t a =25c i fsm 30 a reverse surge current w p =1ms, rectangular-wave, one-shot, t a =25c i rsm 100 ma peak forward voltage i fm =350ma v fm 9 10 v peak reverse current v rm =v rrm i rrm1 5 a avalanche breakdown voltage i r =100a v br 9.5 12.5 kv virtual junction temperature t (vj) 130 c storage temperature t stg -40 ~ +130 c notes: cooling requirement: cathode terminal is fastened to radiating fin that size is more than 50mm 50mm 0.6mm wind-cooled velocity is more than 0.5m/s
high voltage silicon diode s for micro-wave oven 2CL3509 2cl3512 rev. a1 tianjin zhonghuan semiconductor co., lt d p2/3 typical characteristics 0 100 200 300 400 0 3 6 9 12 15 18 i fm (ma) v fm (v) figure ? 1. ? forward ? characteristics 0.0001 0.001 0.01 0.1 1 03691215 i rrm (ua) v rm (kv) figure ? 2. ?????? reverse ? characteristics 0 100 200 300 400 0 20 40 60 80 100 120 140 i f(av) (ma) ta ? ( o c) figure ? 3. ? i f(av) \ ta ? derating t a =25 2CL3509 2cl3512 t a =25 2CL3509 2cl3512
high voltage silicon diode s for micro-wave oven 2CL3509 2cl3512 rev. a1 tianjin zhonghuan semiconductor co., lt d p3/3 safety test safety test 3mm wide metal film is rolled on the surface middle of diode body 1. insulation resistance test: 500v dc voltage is added between a and b. the measurement by insulation resistance meter is big than 1000m ? . 2. resistance to voltage strength te s t: 15kv half-sine wave voltage is added between a and b for one minute and no breakdown or arc in insulation oil. package outline dimensions dim. inches millimeters min. max. min. max. a 0.866 22 b 0.846 0.886 21.5 22.5 c 0.276 0.315 7.0 8.0 d 0.046 0.048 1.17 1.23 marking type code cathode mark 2CL3509 t3509 2cl3512 t3512
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